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| SMD Type High-voltage Amplifier Transistor 2SC3906K SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 High breakdown voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 120 120 5 50 0.2 150 -55 to +150 Unit V V V mA W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE IC=50iA IC=1mA IE=50iA VCB=100V VEB=4V VCE=6V, IC=2mA 180 Testconditons Min 120 120 5 0.5 0.5 560 0.5 140 2.5 V MHz pF Typ Max Unit V V V iA iA VCE(sat) IC=10mA, IB=1mA fT Cob VCE=-12V, IE= 2mA, f=100MHz VCB=-12V, IE=0A, f=1MHz hFE Classification Marking Rank hFE TR R 180 390 TS S 270 560 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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